Optical filter including ring-shaped electrode having a slit

ABSTRACT

An optical filter includes: a first substrate; a second substrate opposed to the first substrate; a first reflecting film provided to the first substrate; a second reflecting film provided to the second substrate and opposed to the first reflecting film; a first electrode provided to the first substrate in a peripheral area of the first reflecting film; a second electrode provided to the first substrate in a peripheral area of the first electrode; a third electrode provided to the second substrate and opposed to the first electrode; and a fourth electrode provided to the second substrate and opposed to the second electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation patent application of U.S. application Ser. No.14/684,725 filed Apr. 13, 2015, which is a continuation patentapplication of U.S. application Ser. No. 13/038,583 filed Mar. 2, 2011,now U.S. Pat. No. 9,030,743 issued May 12, 2015, which claims priorityto Japanese Patent Application No. 2010-057290 filed Mar. 15, 2010, allof which are hereby expressly incorporated by reference herein in theirentireties.

BACKGROUND 1. Technical Field

The present invention relates to an optical filter, an optical filtermodule, an analytical instrument, and an optical apparatus.

2. Related Art

An interference filter has been proposed that has a variabletransmission wavelength (See JP-A-11-142752). As shown in FIG. 3 ofJP-A-11-142752, there are a pair of substrates held in parallel to eachother, a pair of multilayer films (reflecting films) formed on the pairof substrates so as to be opposed to each other and have a gap with aconstant distance, and a pair of electrostatic drive electrodes forcontrolling the gap. Such a variable wavelength interference filtergenerates electrostatic attractive force in accordance with a voltageapplied to the electrostatic drive electrodes to control the gap,thereby making it possible to vary the center wavelength of thetransmission light beam.

However, it is difficult for such a variable wavelength interferencefilter to obtain a gap amount with accuracy due to a variation in thedrive voltage caused by noise or the like.

SUMMARY

An advantage of some aspects of the invention is to provide an opticalfilter, an optical filter module, an analytical instrument, and anoptical apparatus that are each capable of obtaining the gap amount withaccuracy.

According to one aspect of the invention, there is provided an opticalfilter including a first substrate, a second substrate opposed to thefirst substrate, a first reflecting film provided to the firstsubstrate, a second reflecting film provided to the second substrate andopposed to the first reflecting film, a first electrode provided to thefirst substrate and formed in a peripheral area of the first reflectingfilm in a plan view, a second electrode provided to the first substrateand formed in a peripheral area of the first electrode in the plan view,a third electrode provided to the second substrate and opposed to thefirst electrode, and a fourth electrode provided to the second substrateand opposed to the second electrode.

According to this aspect of the invention, the third electrode isprovided to the second substrate and opposed to the first electrode, andthe fourth electrode is provided to the second substrate and opposed tothe second electrode. Thus, as described later, the gap amount can beobtained with better accuracy as compared to the configuration ofcontrolling the gap amount between the reflecting films with only a pairof electrodes.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, the first electrode andthe second electrode are electrically isolated from each other, and thethird electrode and the fourth electrode are electrically connected toeach other via a connecting section.

Since the third electrode and the fourth electrode are electricallyconnected via the connection section, the third electrode and the fourthelectrode can be used as a common electrode.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, there are furtherprovided a first wire connected to the first electrode, and a secondwire connected to the second electrode, the first electrode has a firstring-like shape, the second electrode has a second ring-like shapehaving a first slit, and a part of the first wire is formed in an areawhere the first slit is formed.

Since the second electrode has the second ring-like shape having thefirst slit, the first wire can be drawn from the first electrode via thefirst slit.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, the third electrode hasa third ring-like shape, and the fourth electrode has a fourth ring-likeshape.

Since the third electrode and the fourth electrode each have a ring-likeshape, parallelism between the reflecting films can be kept at a highlevel when controlling the gap.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, the third electrode hasa third ring-like shape, the fourth electrode has a fourth ring-likeshape having a second slit, and the second slit overlaps the first slitin the plan view.

The second slit overlaps the first slit in the plan view. Therefore, thefourth electrode is not formed above the part of the first wire formedin the area of the first slit. Thus, even if the voltage is applied tothe first wire, it is possible to prevent unwanted electrostaticattractive force from being generated between the first wire and thefourth electrode.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, there are furtherprovided a third wire connected to the third electrode, and a fourthwire connected to the third electrode.

Since the third wire and the fourth wire are connected to the thirdelectrode, the wiring resistance can be reduced.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, the first substrate hasa first diagonal line and a second diagonal line, the first wire extendsin a first direction along the first diagonal line, the second wireextends in a second direction along the first diagonal line and reverseto the first direction, the third wire extends in a third directionalong the second diagonal line, and the fourth wire extends in a fourthdirection along the second diagonal line and reverse to the thirddirection.

By thus forming the first wire, the second wire, the third wire, and thefourth wire, the parasitic capacitance between these wires can bereduced.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, a ring width of thesecond electrode is larger than a ring width of the first electrode, anda ring width of the fourth electrode is larger than a ring width of thesecond electrode.

Since the second electrode and the fourth electrode are located in anarea closer to the junction section between the first substrate and thesecond substrate, an electrostatic attractive force that is strongerthan the electrostatic attractive force between the first electrode andthe second electrode is desired. Therefore, by increasing the ring widthof the second electrode and the fourth electrode, the strongerelectrostatic attractive force can be generated.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, the second substrateincludes a first part and a second part having a thickness smaller thana thickness of the first part, the second reflecting film is provided tothe first part of the second substrate, and the third electrode and thefourth electrode are provided to the second part of the secondsubstrate.

Since the third electrode and the fourth electrode are provided to thesecond part having the thickness smaller than the first part, the firstsubstrate can be moved easily when performing gap control.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, the first substrateincludes a first surface and a second surface lower than the firstsurface, the first reflecting film is provided to the first surface, andthe first electrode and the second electrode are provided to the secondsurface.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, there is furtherprovided an electrical potential difference control section adapted tocontrol an electrical potential difference between the first electrodeand the third electrode, and an electrical potential difference betweenthe second electrode and the fourth electrode.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, the electrical potentialdifference control section sets an electrical potential differencebetween the second electrode and the fourth electrode to a firstelectrical potential difference, and then sets an electrical potentialdifference between the first electrode and the third electrode to asecond electrical potential difference.

Thus, as described later, the gap control can easily be performed.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, the electrical potentialdifference control section sets the electrical potential differencebetween the first electrode and the third electrode to the secondelectrical potential difference in a state of setting the electricalpotential difference between the second electrode and the fourthelectrode to the first electrical potential difference.

Since the electrical potential difference control section sets theelectrical potential difference between the first electrode and thethird electrode to the second electrical potential difference in a stateof setting the electrical potential difference between the secondelectrode and the fourth electrode to the first electrical potentialdifference, the prompt gap control can be performed as described later.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, the electrical potentialdifference control section sets an electrical potential differencebetween the second electrode and the fourth electrode to a firstelectrical potential difference, sets the electrical potentialdifference between the second electrode and the fourth electrode to asecond electrical potential difference larger than the first electricalpotential difference after setting the electrical potential differencebetween the second electrode and the fourth electrode to the firstelectrical potential difference, sets an electrical potential differencebetween the first electrode and the third electrode to a thirdelectrical potential difference in a state of setting the electricalpotential difference between the second electrode and the fourthelectrode to the second electrical potential difference, and sets theelectrical potential difference between the first electrode and thethird electrode to a fourth electrical potential difference larger thanthe third electrical potential difference in the state of setting theelectrical potential difference between the second electrode and thefourth electrode to the second electrical potential difference aftersetting the electrical potential difference between the first electrodeand the third electrode to the third electrical potential difference.

Thus, gap control in a larger number of levels can be performed.Further, since the electrical potential difference is changed from thefirst electrical potential difference to the second electrical potentialdifference larger than the first electrical potential difference, and ischanged from the third electrical potential difference to the fourthelectrical potential difference larger than the third electricalpotential difference, prompt gap control can be performed.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, a period during whichthe electrical potential difference between the second electrode and thefourth electrode is set to the second electrical potential difference islonger than a period during which the electrical potential differencebetween the second electrode and the fourth electrode is set to thefirst electrical potential difference, and a period during which theelectrical potential difference between the first electrode and thethird electrode is set to the fourth electrical potential difference islonger than a period during which the electrical potential differencebetween the first electrode and the third electrode is set to the thirdelectrical potential difference.

Thus, as described later, it is possible to place the substrates at thedesired gap spacing.

According to another aspect of the invention, in the optical filteraccording to the above aspect of the invention, the electrical potentialdifference control section sets an electrical potential differencebetween the second electrode and the fourth electrode to a firstelectrical potential difference, sets the electrical potentialdifference between the second electrode and the fourth electrode to asecond electrical potential difference larger than the first electricalpotential difference after setting the electrical potential differencebetween the second electrode and the fourth electrode to the firstelectrical potential difference, sets the electrical potentialdifference between the second electrode and the fourth electrode to athird electrical potential difference larger than the second electricalpotential difference after setting the electrical potential differencebetween the second electrode and the fourth electrode to the secondelectrical potential difference, sets an electrical potential differencebetween the first electrode and the third electrode to a fourthelectrical potential difference in a state of setting the electricalpotential difference between the second electrode and the fourthelectrode to the third electrical potential difference, sets theelectrical potential difference between the first electrode and thethird electrode to a fifth electrical potential difference larger thanthe fourth electrical potential difference in the state of setting theelectrical potential difference between the second electrode and thefourth electrode to the third electrical potential difference aftersetting the electrical potential difference between the first electrodeand the third electrode to the fourth electrical potential difference,and sets the electrical potential difference between the first electrodeand the third electrode to a sixth electrical potential differencelarger than the fifth electrical potential difference in the state ofsetting the electrical potential difference between the second electrodeand the fourth electrode to the third electrical potential differenceafter setting the electrical potential difference between the firstelectrode and the third electrode to the fifth electrical potentialdifference, an absolute value of a difference between the secondelectrical potential difference and the third electrical potentialdifference is smaller than an absolute value of a difference between thefirst electrical potential difference and the second electricalpotential difference, and an absolute value of a difference between thefifth electrical potential difference and the sixth electrical potentialdifference is smaller than an absolute value of a difference between thefourth electrical potential difference and the fifth electricalpotential difference.

Thus, as described later, it is possible to place the substrates at thedesired gap spacing.

According to another aspect of the invention, there is provided anoptical filter module including any one of the optical filters describedabove, and a light receiving element adapted to receive a light beamtransmitted through the optical filter.

According to an aspect of the invention, there is provided an analyticalinstrument including any one of the optical filters described above.

According to an aspect of the invention, there is provided an opticalapparatus including any one of the optical filters described above.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will be described with reference to theaccompanying drawings, wherein like numbers reference like elements.

FIG. 1 is a cross-sectional view showing a non-voltage application stateof an optical filter according to an embodiment of the invention.

FIG. 2 is a cross-sectional view showing a voltage application state ofthe optical filter shown in FIG. 1.

FIG. 3A is a plan view of a lower electrode, and FIG. 3B is a plan viewof an upper electrode of the embodiment.

FIGS. 4A and 4B are plan views of the lower and upper electrodes in anoverlapping state viewed from the side of a second substrate.

FIG. 5 is a plan view showing a wiring layout of first through fourthlead wires viewed from the side of the second substrate through thesecond substrate.

FIG. 6 is a diagram of an applied voltage control system of the opticalfilter.

FIG. 7 is a characteristics table showing an example of voltage tabledata.

FIG. 8 is a timing chart of voltage application realized with thevoltage table data.

FIG. 9 is a graph showing a relationship between a gap between first andsecond reflecting films of the optical filter and a transmission peakwavelength.

FIG. 10 is a graph showing a relationship between an electricalpotential difference between the first and second electrodes and theelectrostatic attractive force.

FIG. 11 is a characteristics table showing data of the embodimentregarding the electrical potential difference, the gap, and the variablewavelength shown in FIG. 7.

FIG. 12 is a graph showing a relationship between the applied voltageand the gap shown in FIG. 11.

FIG. 13 is a graph showing a relationship between the applied voltageand the transmission peak wavelength shown in FIG. 11.

FIGS. 14A and 14B are plan views showing first and second electrodes ofa comparative example.

FIG. 15 is a characteristics table showing data of the comparativeexample related to the electrical potential difference, gap, andvariable wavelength.

FIG. 16 is a graph showing a relationship between the applied voltageand the gap shown in FIG. 15.

FIG. 17 is a graph showing a relationship between the applied voltageand the transmission peak wavelength shown in FIG. 15.

FIG. 18 is a cross-sectional view showing non-voltage application stateof an optical filter according to another embodiment of the invention.

FIG. 19 is a block diagram of an analytical instrument of still anotherembodiment of the invention.

FIG. 20 is a flowchart showing spectrometric measurement operation inthe instrument shown in FIG. 19.

FIG. 21 is a block diagram of an optical apparatus of still anotherembodiment of the invention.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, some preferred embodiments of the invention will bedescribed in detail. It should be noted that the embodiments explainedbelow do not limit the content of the invention as set forth in theappended claims, and all of the constituents set forth in theembodiments are not necessarily essential to the invention.

1. Optical Filter 1.1. Filter Section of Optical Filter 1.1.1. GeneralDescription of Filter Section

FIG. 1 is a cross-sectional view of an optical filter according to thepresent embodiment in a non-voltage application state, and FIG. 2 is across-sectional view thereof in a voltage application state. The opticalfilter 10 shown in FIGS. 1 and 2 includes a first substrate 20 and asecond substrate 30 opposed to the first substrate 20. Although in thepresent embodiment a fixed substrate is used as the first substrate 20,and a movable substrate or diaphragm is used as the second substrate 30,it is sufficient that either one or both of the substrates can move.

In the present embodiment, a support section 22 is formed, for example,integrally with the first substrate 20, and for movably supporting thesecond substrate 30. The support section 22 can also be provided to thesecond substrate 30, or can be formed separately from the first andsecond substrates 20, 30.

The first and second substrates 20, 30 are each made of various types ofglass such as soda glass, crystalline glass, quartz glass, lead glass,potassium glass, borosilicate glass, or alkali-free glass, a quartzcrystal, or the like. Among these materials, as the constituent materialof the substrates 20, 30 the glass containing alkali metal such assodium (Na) or potassium (K) is preferable, and by forming thesubstrates 20, 30 using such glass materials, the adhesiveness withreflecting films 40, 50 and electrodes 60, 70 described later, and thebonding strength between the substrates can be improved. Further, thesetwo substrates 20, 30 are bonded by, for example, surface activatedbonding with a plasma-polymerized film to thereby be integrated witheach other. Each of the first and second substrates 20, 30 is formed tohave a square shape, for example 10 mm on a side, and the greatestdiameter of the portion functioning as a diaphragm is, for example, 5mm.

The first substrate 20 is formed by etching a glass substrate formed tohave a thickness of, for example, 500 μm. The first substrate 20 isprovided with a first reflecting film 40 having, for example, a circularshape formed on a first opposed surface 20A1 at a central portion of theopposed surface opposed to the second substrate 30. Similarly, thesecond substrate 30 is formed by etching a glass substrate formed tohave a thickness of, for example, 200 μm. The second substrate 30 isprovided with a second reflecting film 50 having, for example, acircular shape opposed to the first reflecting film 40 formed at acentral position of an opposed surface 30A opposed to the firstsubstrate 20.

It should be noted that the first and second reflecting films 40, 50 areeach formed to have, for example, a circular shape with a diameter ofabout 3 mm. The first and second reflecting films 40, 50 are each areflecting film formed of an AgC single layer, and can be providedrespectively to the first and second substrates 20, 30 by a method suchas sputtering. The AgC single layer reflecting film is formed to have athickness dimension of, for example, 0.03 μm. Although in the presentembodiment there is described an example of using the reflecting film ofthe AgC single layer capable of performing a dispersion operation in theentire visible light range as the first and second reflecting films 40,50, the reflecting films are not limited thereto. It is also possible touse a dielectric multilayer film obtained by stacking laminated filmsof, for example, TiO₂ and SiO₂, which can perform the dispersionoperation in a narrower wavelength band, but has a higher transmittanceof the dispersed light beams, a narrower half-value width of thetransmittance, and more preferable resolution compared to the AgC singlelayer reflecting film.

Further, it is possible to form antireflection films (AR) on therespective surfaces of the first and second substrates 20, 30 on theopposite side to the opposed surfaces 20A1, 20A2, and 30A thereof atpositions corresponding to the first and second reflecting films 40, 50.The antireflection films are each formed by alternately stacking lowrefractive index films and high refractive index films, and decrease thereflectance to the visible light on the interfaces of the first andsecond substrates 20, 30 while increasing the transmittance thereof.

The first and second reflecting films 40, 50 are disposed so as to beopposed to each other via a first gap G1 in the non-voltage applicationstate shown in FIG. 1. It should be noted that although in the presentembodiment a fixed mirror is used as the first reflecting film 40 and amovable mirror is used as the second reflecting film 50, it is possibleto make either one or both of the first and second reflecting films 40,50 movable in accordance with the configuration of the first and secondsubstrates 20, 30 described above.

A second opposed surface 20A2, which is located on the periphery of thefirst reflecting film 40 and on the periphery of the first opposedsurface 20A1 of the first substrate 20 in the plan view, is providedwith, for example, a lower electrode 60. Similarly, the opposed surface30A of the second substrate 30 is provided with an upper electrode 70 soas to correspond to the lower electrode 60. The lower electrode 60 andthe upper electrode 70 are disposed so as to be opposed to each othervia a second gap G2. It should be noted that the surfaces of the lowerand upper electrodes 60, 70 can be covered by an insulating film.

In the present embodiment, the surface of the first substrate 20 opposedto the second substrate 30 includes the first opposed surface 20A1provided with the first reflecting film 40 and the second opposedsurface 20A2 disposed in the periphery of the first opposed surface 20A1in the plan view, and provided with the lower electrode 60. Although thefirst opposed surface 20A1 and the second opposed surface 20A2 can becoplanar with each other, in the present embodiment there is a stepbetween the first opposed surface 20A1 and the second opposed surface20A2, and the first opposed surface 20A1 is placed nearer to the secondsubstrate 30 than the second opposed surface 20A2. Thus, therelationship of (first gap G1)<(second gap G2) is established.

The lower electrode 60 is divided into at least K (K is an integer equalto or greater than 2) segment electrodes electrically isolated from eachother, and in the present embodiment, the lower electrode 60 has firstand second electrodes 62, 64 as an example of K=2. Specifically, the Ksegment electrodes 62, 64 can be set separately to voltages differentfrom each other, while the upper electrode 70 is a common electrodehaving the same electrical potential. The upper electrode 70 is alsodivided into third and fourth electrodes 72, 74. The third and fourthelectrodes 72, 74 are not necessarily set to the common electrodeshaving the same electrical potential, but the structure in which thethird electrode 72 and the fourth electrode 74 are electrically isolated(independently controllable) can be adopted. For example, it is alsopossible that the third electrode 72 and the fourth electrode 74 havethe structure shown in FIG. 4A. Further, in the structure of the lowerelectrode 60 and the upper electrode 70, it is sufficient that theelectrical potential difference between the first electrode 62 and thethird electrode 72 and the electrical potential difference between thesecond electrode 64 and the fourth electrode 74 can be controlledindependently. It should be noted that if K≥3 is satisfied, therelationship between the first and second electrodes 62, 64 describedbelow can be applied to any two segment electrodes adjacent to eachother.

In the optical filter 10 having such a structure, the first and secondsubstrates 20, 30 have respective areas where the reflecting films (thefirst and second reflecting films 40, 50) are respectively formed andrespective areas where the electrodes (the lower and upper electrodes60, 70) are respectively formed as areas different from each other inthe plan view, and there is no chance of stacking the reflecting filmand the electrode with each other as described in JP-A-11-142752.Therefore, even if at least either one (the second substrate 30 in thepresent embodiment) of the first and second substrates 20, is formed asa movable substrate, the reflecting film and the electrode are notstacked with each other, and therefore, the movable substrate can beassured to easily deflect. Moreover, unlike JP-A-11-142752, since thereflecting films are not formed on the lower and upper electrodes 60,70, even if the optical filter 10 is used as a transmissive orreflecting variable wavelength interference filter, the restriction thatlight transmissive electrodes are used as the lower and upper electrodes60, 70 does not arise. It should be noted that since even the lighttransmissive electrode affects the transmission characteristics, byeliminating the formation of the reflecting film on the lower and upperelectrodes 60, 70, the optical filter 10 as a transmissive variablewavelength interference filter can be provided with desired transmissioncharacteristics.

Further, in the optical filter 10 by applying the common voltage (e.g.,the ground voltage) to the upper electrode 70 disposed in the peripheryof the second reflecting film 50 in the plan view, and applying voltagesindependent of each other to the respective K segment electrodes 62, 64constituting the lower electrode 60 disposed in the periphery of thefirst reflecting film 40 in the plan view to thereby act theelectrostatic attractive force indicated by the arrow between theopposed electrodes as shown in FIG. 2, the first gap G1 between thefirst and second reflecting films 40, 50 can be varied so as to have avalue smaller than the initial gap.

In other words, as shown in FIG. 2 showing the optical filter in thevoltage application state, a first gap variable drive section (anelectrostatic actuator) 80 composed of the first electrode 62 and theupper electrode 70 opposed thereto, and a second gap variable drivesection (an electrostatic actuator) 90 composed of the second electrode64 and the upper electrode 70 opposed thereto are driven independently.

As described above, by providing the plurality (K) of gap variable drivesections 80, 90 independent of each other disposed only in the peripheryof the first and second reflecting films 40, 50 in the plan view, andvarying two parameters, namely the values of the voltages appliedrespectively to the K segment electrodes 62, 64 and the number ofsegment electrodes selected for applying the voltage among the K segmentelectrodes 62, 64, the size of the gap between the first and secondreflecting films 40, 50 is controlled.

It is difficult to obtain both the large gap variable range and a lowsensitivity to the voltage variation due to noise or the like with theparameter of the type of voltage alone as in JP-A-11-142752. By addingthe parameter of the number of electrodes as in the present embodiment,it becomes possible to generate more fine-tuned electrostatic attractiveforce to thereby perform fine gap adjustment in a larger gap variablerange by applying the same applied voltage range to the individualsegment electrodes as in the case of controlling it by voltage alone.

Here, it is assumed that the maximum value of the applied voltage is Vmax, and the gap can be varied in N levels. In the case in which thelower electrode is not divided into a plurality of segments, it isnecessary to divide the maximum voltage V max into N to thereby assignthe applied voltages. On this occasion, it is assumed that the minimumvalue of the voltage variation between the applied voltages differentfrom each other is ΔV1 min. In contrast, in the present embodiment, theapplied voltage to each of the K segment electrodes can be assigned bydividing the maximum voltage V max into averagely (N/K). On thisoccasion, it is assumed that the minimum value of the voltage variationbetween the applied voltages different from each other applied to thesame segment electrode with respect to each of the K segment electrodesis ΔVkmin. In this case, it is obvious that ΔV1 min<ΔVkmin is true.

As described above, if the voltage minimum variation ΔVkmin can beassured to be large, the gap variation can be reduced even when theapplied voltages to the K (first and second) electrodes 62, 64 vary in acertain extent due to the noise depending on the power supply variationand the environment. In other words, the sensitivity to the noisebecomes low, or the voltage sensitivity becomes lower. Thus, gap controlwith high accuracy becomes possible, and it is not necessarily requiredto perform feedback control on the gap, which is required inJP-A-11-142752. Further, even if the feedback control is performed onthe gap, since the sensitivity to the noise is low, early settling canbe achieved.

In the present embodiment, to ensure bending of the second substrate 30as the movable substrate, an area where the upper electrode 70 is formedis formed as a thin-wall section 34 with a thickness dimension of, forexample, 50 μm as shown in FIG. 1. The thin-wall section 34 is formed tohave a wall thickness thinner than a thick-wall section of the areawhere the second reflecting film 50 is disposed and a thick-wall section36 of the area having contact with the support section 22. In otherwords, in the second substrate 30 the surface 30A where the secondreflecting film 50 and the upper electrode 70 are formed is a flatplane, the thick-wall section 32 is formed in a first area where thesecond reflecting film 50 is disposed, and the thin-wall section 34 isformed in a second area where the upper electrode 70 is formed. Asdescribed above, by making the thick-wall section 32 difficult to bendwhile assuring the bendability with the thin-wall section 34, it becomespossible to vary the gap while keeping the second reflecting film 50flat.

It should be noted that although in the present embodiment theindependent (K) gap variable drive sections are each constituted with anelectrostatic actuator composed of a pair of electrodes, it is alsopossible to replace at least one of those electrostatic actuators withanother actuator such as a piezoelectric element. It should be notedthat the electrostatic actuator for providing attractive force in anon-contact manner causes little interference between gap variable drivesections, and is therefore suitable for controlling the gap with highaccuracy. In contrast thereto, in the case, for example, in which twopiezoelectric elements are disposed between the first and secondsubstrates 20, 30, there is caused a phenomenon, for example, that thepiezoelectric element, which is not driven, acts to hinder the gapvariation caused by the other piezoelectric element, which is driven,and a harmful effect is caused in the method of driving two or more gapvariable drive sections independently of each other. From that point ofview, the plurality of gap variable drive sections is preferablycomposed of the electrostatic actuators.

1.1.2. Lower Electrode

As shown in FIG. 3A, the K segment electrodes 62, 64 constituting thelower electrode 60 can be arranged to have ring-like shapes concentricwith each other around the center of the first reflecting film 40.Specifically, the first electrode 62 has a first ring-like electrodesection 62A, the second electrode 64 has a second ring-like electrodesection 64A outside the first ring-like electrode section 62A, and eachof the ring-like electrode sections 62A, 64A is formed to have theconcentric ring-like shape with respect to the first reflecting film. Itshould be noted that a “ring-like shape” and a “ring shape” are termsnot limited to the shape of an endless ring, but include a discontinuousring shape, and are not limited to the shape of a circular ring, butinclude the shapes of a rectangular ring, polygonal ring, and so on.

According to this configuration, as shown in FIG. 2, the first andsecond electrodes 62, 64 are in an axisymmetric arrangement with respectto the center line L of the first reflecting film 40. According to thisconfiguration, since the electrostatic attractive forces F1, F2 actingbetween the lower and upper electrodes 60, 70 in response to applicationof the voltages acts thereon axisymmetrically with respect to the centerline L of the first reflecting film 40, parallelism between the firstand second reflecting films 40, 50 is enhanced.

It should be noted that as shown in FIG. 3A, the ring width W2 of thesecond electrode 64 can be set larger than the ring width W1 of thefirst electrode 62 (W2>W1). This is because the electrostatic attractiveforce is proportional to the area of the electrode, and it is desiredthat the electrostatic attractive force F2 generated by the secondelectrode 64 is stronger than the electrostatic attractive force F1generated by the first electrode 62. In more detail, the secondelectrode 64 located outside is disposed nearer to the support section22 of the substrates which functions as a hinge section as compared tothe first electrode 62. Therefore, it is desired for the secondelectrode 64 to generate an electrostatic attractive force F2 strongenough to overcome the resistive force at the support section (the hingesection) 22. The second electrode 64 located outside has a largerdiameter than that of the first electrode 62 located inside, andtherefore, even if the widths are the same (W1=W2), the area of thesecond electrode 64 is larger. Therefore, although it is also possibleto make the widths equal to each other (W1=W2), the ring width W2 ismade larger to thereby make it possible to further increase the area toincrease the electrostatic attractive force F2 generated by the secondelectrode 64. In particular, in the case in which the second electrode64 located outside is driven prior to the first electrode 62 asdescribed later, since the initial gap G2 between the second electrode64 and the upper electrode 70 is large, it is advantageous in view ofthe fact that it is possible to make the area of the second electrode 64larger to thereby increase the electrostatic attractive force F2generated there. On that occasion, since the gap is made smaller whenstarting to drive the first electrode 62 located inside as long as thedrive state of the second electrode 64 is maintained, there is noharmful effect on driving if the ring width W1 of the first electrode 62is small.

Here, a first lead wire 62B is connected to the first electrode 62, anda second lead wire 64B is connected to the second electrode 64. Thefirst and second lead wires 62B, 64B are formed so as to extend inradial directions from the center of the first reflecting film 40, forexample. There is provided a first slit 64C for making the secondring-like electrode section 64A of the second electrode 64discontinuous. The first lead wire 62B extending from the firstelectrode 62 located inside is drawn to the outside of the secondelectrode 64 via the first slit 64C provided to the second electrode 64located outside.

As described above, in the case of making the first and secondelectrodes 62, 64 respectively have the ring-like electrode sections62A, 64A, a taking-out path for the first lead wire 62B of the firstelectrode 62 located inside can easily be assured by the first slit 64Cprovided to the second electrode 64 located outside.

1.1.3. Upper Electrode

The upper electrode 70 disposed on the second substrate 30 can be formedin an area of the second substrate 30 including an area opposed to thelower electrode 60 (the first and second electrodes 62, 64) provided tothe first substrate 20. In the case of making the upper electrode 70 acommon electrode set to the same voltage, it is possible to form theupper electrode 70 as, for example, a mat electrode.

Alternatively, the upper electrode 70 disposed on the second electrode30 displaced with respect to the first substrate 20 as in the presentembodiment can be divided into K segment electrodes similarly to thelower electrode 60. The K segment electrodes can also be arranged tohave concentric ring-like shapes with respect to the center of thesecond reflecting film 50. According to this configuration, since thearea of the electrode provided to the second substrate 30, which ismovable, is reduced to the desired minimum, the rigidity of the secondsubstrate 30 is reduced, and the bendability can be assured.

As shown in FIGS. 1, 2, and 3B, the K segment electrodes constitutingthe upper electrode 70 can include the third electrode 72 and the fourthelectrode 74. The third electrode 72 has a third ring-like electrodesection 72A, the fourth electrode 74 has a fourth ring-like electrodesection 74A outside the third ring-like electrode section 72A, and eachof the ring-like electrode sections 72A, 74A is formed to have theconcentric ring-like shape with respect to the second reflecting film.The meaning of the “concentric ring-like shape” is the same as used forthe lower electrode 60. The third electrode 72 corresponds to the firstelectrode 62, and the fourth electrode 74 corresponds to the secondelectrode 64. Therefore, in the present embodiment, the ring width(equal to the ring width W2 of the second electrode 64) of the fourthelectrode 74 is larger than the ring width (equal to the ring width W1of the first electrode 62) of the third electrode 72.

Further, it is possible to electrically connect the third and fourthelectrodes 72, 74 to each other to be set to the same electricalpotential. In this case, third and fourth lead electrodes 76A, 76B areformed so as to extend from the center of the second reflecting film 50in radial directions, for example. Each of the third and fourth leadelectrodes 76A, 76B is electrically connected to both of the thirdelectrode 72 located inside and the fourth electrode 74 located outside.It should be noted that since the third and fourth electrodes 72, 74 areformed as a common electrode, it is possible to connect them with asingle lead electrode. However, the wiring resistance can be reduced byproviding two or more lead electrodes to thereby improve thecharging/discharging rate of the common electrode. It should be notedthat in the case of adopting a structure in which the third and fourthelectrodes 72, 74 are electrically isolated, lead electrodescorresponding respectively to the electrodes 72, 74 are provided.

1.1.4. Overlapping Area Between Lower and Upper Electrodes

FIG. 4A shows an overlapping state in a plan view of the lower and upperelectrodes 60, 70 of the present embodiment viewed from the side of thesecond substrate 30. In FIG. 4A, since the first and second electrodes62, 64 are opposed to the third and fourth electrodes 72, 74 of thesecond electrode 70, the lower electrode 60 located on the lower sidedoes not appear in the plan view thereof viewed from the side of thesecond substrate 30. Only the first and second lead wires 62B, 64B ofthe lower electrode 60 located on the lower side appear in the plan viewviewed from the side of the second substrate 30 as indicated byhatching. Since the third ring-like electrode section 74A of the upperelectrode 70 is continuous in the circumferential direction, the firstlead wire 62B is opposed to the opposed area 74A1 of the third ring-likeelectrode section 74A in an intermediate area 62B1 thereof.

As shown in FIG. 3A, in the present embodiment since the secondelectrode 64 located outside out of the lower electrode 60 has a firstslit 64C, the electrostatic attractive force F2 (see FIG. 2) based onthe voltage applied to the second electrode 64 does not act in the areaof the slit 64C.

On the other hand, since the first lead wire 62B is disposed in thefirst slit 64C as shown in FIG. 3A, the electrostatic attractive forceF1 (see FIG. 2) acting between the first lead wire 62B having the sameelectrical potential as the first electrode 62 located inside and thefourth electrode 74 located outside can be generated in the first slit64C. As an advantage of this configuration, in the case of, for example,driving the first and second electrodes 62, 64 with substantially thesame voltages, uniform electrostatic attractive force can be generatedin substantially the entire circumference (including the opposed area74A1 to the first slit 64C) of the fourth electrode 74 located outside.

FIG. 4B shows an overlapping state in a plan view of the lower and upperelectrodes 60, 70′ of a modified example viewed from the side of thesecond substrate 30. The upper electrode 70′ shown in FIG. 4B isdifferent from the upper electrode 70 shown in FIG. 4A in the point thatthe fourth electrode 74 is further provided with a second slit 78 formaking the fourth ring-like electrode section 74′ discontinuous at theposition opposed to the first slit 64C of the lower electrode 60. Inother points, the upper electrode 70′ shown in FIG. 4B is the same asthe upper electrode 70 shown in FIG. 4A.

According to this configuration, the electrode opposed to the first leadwire 62B is eliminated. Therefore, it is possible to prevent unwantedelectrostatic attractive force acting between the first lead wire 62Bhaving the same electric potential as the first electrode located insideand a fourth electrode 74′ located outside from being generated in thefirst slit 64C when driving the first electrode 62 located inside, forexample.

1.1.5. Lead Wiring

FIG. 5 is a plan view viewed from the side of the second substrate 30through the second substrate 30, and shows a wiring layout of the firstthrough fourth lead wires 62B, 64B, 76A, and 76B. In FIG. 5, at leastone of the first and second substrates 20, 30 is formed as a rectangularsubstrate having first and second diagonal lines. In the presentembodiment, each of the first and second substrates 20, 30 is formed tohave a square shape, for example 10 mm on a side. Assuming that thedirection in which the first lead wire 62B extends from the firstelectrode 62A along the first diagonal line is a first direction D1, thesecond lead wire 64B extends on the first diagonal line in a seconddirection D2 which is the reverse direction to the first direction D1.The third lead wire 76A extends in a third direction D3 along the seconddiagonal line. The fourth lead wire 76B extends on the second diagonalline in a fourth direction D4 which is the reverse direction to thethird direction D3. Further, there are disposed first through fourthexternal connection electrode sections 101 through 104 located at fourcorners of the rectangular substrates 20, 30 in the plan view to whichthe first through fourth lead wires 62B, 64B, 76A, and 76B are connectedrespectively.

According to this configuration, firstly, the first and second leadwires 62B, 64B provided to the first substrate 20 and the third andfourth lead wires 76A, 76B provided to the second substrate 30 do notoverlap with each other in the plan view, and therefore, no parallelelectrodes are constituted. Therefore, the wasteful electrostaticattractive force is hardly generated between the first and second leadwires 62B, 64B and the third and fourth lead wires 76A, 76B, and furtherthe wasteful capacitance can be reduced. Further, the wiring lengths ofthe first through fourth lead wires 62B, 64B, 76A, and 76B respectivelyto the first through fourth external connection electrode sections 101through 104 become the shortest. Therefore, the wiring resistances andthe wiring capacitances of the first through fourth lead wires 62B, 64B,76A, and 76B are reduced, and the charging/discharging rate of the firstthrough fourth electrodes 62, 64, 72, and 74 can be raised.

It should be noted that as the structure of the first through fourthlead wires 62B, 64B, 76A, and 76B, it is also possible to adopt astructure in which the first substrate has a first imaginary straightline and a second imaginary straight line intersecting the firstimaginary straight line, the first lead wire 62B extends in a firstdirection along the first imaginary straight line, the second lead wire64B extends in a second direction along the first imaginary straightline and opposite to the first direction, the third lead wire 76Aextends in a third direction along the second imaginary straight line,and the fourth lead wire 76B extends in a fourth direction along thesecond imaginary straight line and opposite to the third direction.

It should be noted that it is also possible to provide the first throughfourth external connection electrode sections 101 through 104 to eitherone of the first and second substrates 20, 30, or to provide some of thefirst through fourth external connection electrodes 101 through 104 andthe rest thereof to the respective substrates 20, 30. In the case ofdisposing the first through fourth external connection electrodes 101through 104 to either one of the first and second substrates 20, 30, thelead wire provided to the other of the first and second substrates 20,30 can be connected to the external connection electrode sectionprovided to the one of the substrates via a conductive paste or thelike. It should be noted that the first through fourth externalconnection electrode sections 101 through 104 are connected to theoutside via connection sections such as lead wires or wire bonding.

Further, the first through fourth lead wires 62B, 64B, 76A, and 76B canintersect, for example, a plasma polymeric film for bonding the firstand second substrates 20, 30 to each other. Alternatively, it is alsopossible to draw the first through fourth lead wires 62B, 64B, 76A, and76B to the outside beyond the bonding surface via groove sectionsprovided to one of the bonding surfaces of the first and secondsubstrates 20, 30.

1.2. Voltage Control System of Optical Filter 1.2.1. General Descriptionof Application Voltage Control System

FIG. 6 is a block diagram of an applied voltage control system of theoptical filter 10. As shown in FIG. 6, the optical filter 10 has anelectrical potential difference control section 110 for controlling theelectrical potential difference between the lower electrode 60 and theupper electrode 70. In the present embodiment, since the upper electrode70 (the third and fourth electrodes 72, 74) as the common electrode isfixed to a constant common voltage, for example, the ground voltage(0V), the electrical potential control section 110 varies the appliedvoltages to the first and second electrodes 62, as the K segmentelectrodes constituting the lower electrode 60 to thereby respectivelycontrol an inner electrical potential difference ΔVseg1 and an outerelectrical potential difference ΔVseg2 between the respective first andsecond electrodes 62, 64 and the upper electrode 70. It should be notedthat the upper electrode can apply the common voltage other than theground voltage, and on that occasion, it is possible for the electricalpotential difference control section 110 to controlapplication/non-application of the common voltage to the upper electrode70.

In FIG. 6 the electrical potential difference control section 110includes a first electrode drive section connected to the firstelectrode 62 such as a first digital-analog converter (DAC1) 112, asecond electrode drive section connected to the second electrode 64 suchas a second digital-analog converter (DAC2) 114, and a digital controlsection 116 for performing control, such as digital control, on thedigital-analog converters. The first and second digital-analogconverters 112, 114 are supplied with voltages from a power supply 120.The first and second digital-analog converters 112, 114 are suppliedwith the voltages from the power supply 120, and at the same time outputanalog voltages corresponding to the digital values from the digitalcontrol section 116. As the power supply 120, what is implemented in ananalytical instrument or an optical apparatus to which the opticalfilter 10 is mounted can be used, and further, a power supply dedicatedto the optical filter 10 can also be used.

1.2.2. Method of Driving Optical Filter

FIG. 7 is a characteristics table showing an example of voltage tabledata, which is original data of the control in the digital controlsection 116 shown in FIG. 6. The voltage table data can be provided tothe digital control section 116 itself, or implemented in the analyticalinstrument or the optical apparatus to which the optical filter 10 ismounted.

FIG. 7 shows an example with N=9 as the voltage table data for varyingthe gap between the first and second reflecting films 40, 50 in totallyN levels by sequentially applying the voltages to each of the first andsecond electrodes 62, 64 as the K electrodes. It should be noted that inFIG. 7, the case in which the respective electrical potentialdifferences between the first and second electrodes 62, 64 and the upperelectrode 70 are 0V is not included in the N levels of gap variablerange. FIG. 7 shows only the case in which the voltage value other thanthe voltage value (0V) of the common voltage applied to the upperelectrode 70 is applied to at least one of the first and secondelectrodes 62, 64. It should be noted that it is also possible to definethe case, in which both of the electrical potential differences betweenthe first and second electrodes 62, 64 and the upper electrode 70 are0V, as the maximum transmission peak wavelength.

The electrical potential difference control section 110 sets the voltagevalues to the respective K segment electrodes (the first and secondelectrodes 62, 64) in accordance with the voltage table data shown inFIG. 7, and then applies the voltage values to the respective K segmentelectrodes (the first and second electrodes 62, 64). FIG. 8 is a timingchart of the voltage application realized by performing the drive in theorder of the data number of the voltage table data shown in FIG. 7.

As shown in FIGS. 7 and 8, L (=4) levels of voltages (VI1 through VI4;VI1<VI2<VI3<VI4) are applied to the first electrode 62, and M (=5)levels of voltages (VO1 through VO5; VO1<VO2<VO3<VO4<VO5) are applied tothe second electrode 64, thereby varying the first gap G1 between thefirst and second reflecting films 40, 50 in 9 (N=L+M=9) levels from g0to g8.

According to the voltage control described above, the optical filter 10can realize the wavelength transmission characteristics shown in FIG. 9.FIG. 9 shows the wavelength transmission characteristics in the case ofvarying the dimension of the first gap G1 between the first and secondreflecting films 40, 50 in a range of, for example, g0 through g3. Inthe optical filter 10, when the dimension of the first gap G1 betweenthe first and second reflecting films 40, 50 is varied in the range of,for example, g0 through g3 (g0>g1>g2>g3), the transmission peakwavelength is determined in accordance with the dimension of the firstgap G1. Specifically, the wavelength λ of the light beam transmittedthrough the optical filter 10 satisfies the condition that the valueobtained by multiplying the half wavelength (λ/2) by an integer (n) isequal to the dimension of the first gap G1 (n×λ=2G1). The light beamhaving the wavelength λ, which fails to satisfy the condition that thevalue obtained by multiplying the half wavelength (λ/2) by an integer(n) is equal to the dimension of the first gap G1, interferes itself tobe attenuated in the process of being multiply-reflected by the firstand second reflecting films 40, 50, and is never transmitted.

Therefore, as shown in FIG. 9, by varying the dimension of the first gapG1 between the first and second reflecting films 40, 50 sequentially tog0, g1, g2, and then g3 so as to be narrowed, the light beam transmittedthrough the optical filter 10 varies in the wavelength, namely thetransmission peak wavelength, sequentially to λ0, λ1, λ2, and then λ3(λ0>λ1>λ2>λ3) so as to be shortened.

Here, although the values of L, M, and N can arbitrarily be changed, theintegers satisfying L≥3, M≥3, and N≥6 are preferable. If the integerssatisfying L≥3, M≥3, and N≥6 are used, it is possible to switch theinner electrical potential difference ΔVseg1 and the outer electricalpotential difference ΔVseg2 set respectively to the first and secondelectrodes 62, 64 from the first electrical potential difference ΔV1 tothe second electrical potential difference ΔV2 larger than the firstelectrical potential difference ΔV1, and then the third electricalpotential difference ΔV3 larger than the second electrical potentialdifference ΔV2.

As shown in FIG. 8, the electrical potential difference control section110 firstly applies the voltages VO1 through VO5 sequentially to thesecond electrode 64 located outside. Since the upper electrode 70 is setto 0V, the electrical potential difference between the upper electrode70 and the second electrode 64, namely the outer electrical potentialdifference Vseg2, can sequentially be increased to the first electricalpotential difference VO1, the second electrical potential differenceVO2, the third electrical potential difference VO3, the fourthelectrical potential difference VO4, and then the fifth electricalpotential difference VO5. Thus, the dimension of the first gap G1between the first and second reflecting films 40, 50 is sequentiallyreduced in such a manner as g0→g1→g2→g3→g4. As a result, the wavelengthλ of the light beam transmitted through the optical filter 10, namelythe transmission peak wavelength, sequentially varies so as to beshortened in such a manner as λ0→λ1→λ2→λ3→λ4.

Subsequently, as shown in FIG. 8, the electrical potential differencecontrol section 110 sequentially applies the voltages VI1 through VI4 tothe first electrode located inside while keeping the application of themaximum applied voltage VO5 to the second electrode 64. Since the upperelectrode 70 is set to 0V, the electrical potential difference betweenthe upper electrode 70 and the first electrode 62, namely the innerelectrical potential difference Vseg1, can sequentially be increased tothe first electrical potential difference VI1, the second electricalpotential difference VI2, the third electrical potential difference VI3,and then the fourth electrical potential difference VI4. Thus, thedimension of the first gap G1 between the first and second reflectingfilms 40, 50 is sequentially reduced in such a manner as g5→g6→g7→g8. Asa result, the wavelength λ of the light beam transmitted through theoptical filter 10, namely the transmission peak wavelength, sequentiallyvaries so as to be shortened in such a manner as λ5→λ6→λ7→λ8.

Since the electrical potential difference control section 110 switchesthe outer electrical potential difference Vseg2 at least from the firstelectrical potential difference VO1 to the second electrical potentialdifference VO2 larger than the first electrical potential differenceVO1, and further the third electrical potential difference VO3 largerthan the second electrical potential difference VO2, and furtherswitches the inner electrical potential difference Vseg1 at least fromthe first electrical potential difference VI1 to the second electricalpotential difference VI2 larger than the first electrical potentialdifference VI1, and further the third electrical potential differenceVI3 larger than the second electrical potential difference VI2, it ispossible to suppress the damped free vibration of the second substrate30, the movable substrate, and thus the prompt wavelength varyingoperation can be performed. Moreover, the electrical potentialdifference control section 110 applies three or more voltage values(voltage of 0 can be included) to each of the first and secondelectrodes 62, 64, namely applies at least the first segment voltageVI1, the second segment voltage VI2, and the third segment voltage VI3to the first electrode 62, and applies at least the first segmentvoltage VO1, the second segment voltage VO2, and the third segmentvoltage VO3 to the second electrode 64. Therefore, it becomes possibleto vary the gap in three or more levels only by driving either one ofthe first and second electrodes 62, 64, and therefore, it can beprevented to unnecessarily increase the number of segment electrodes ofthe lower electrode 60.

1.2.3. Voltage Variation (Absolute Value of Difference Between FirstElectrical Potential Difference and Second Electrical PotentialDifference, Etc.)

The electrical potential difference control section 110 can make theabsolute value of the difference between the second electrical potentialdifference and the third electrical potential difference smaller thanthe absolute value of the difference between the first electricalpotential difference and the second electrical potential difference withrespect to each of the inner electrical potential difference Vseg1 andthe outer electrical potential difference Vseg2. Since in the presentembodiment the upper electrode 70 is fixed to the common voltage of 0V,the absolute value of the difference between the first electricalpotential difference and the second electrical potential difference asthe outer electrical potential difference Vseg2, for example, isequivalent to the voltage variation ΔVO1 between the first segmentvoltage VO1 and the second segment voltage VO2 applied to the secondelectrode 64 as shown in FIGS. 7 and 8. As shown in FIGS. 7 and 8, thevoltage variations of the outer electrical potential difference Vseg2are in a descending relationship of ΔVO1>ΔVO2>ΔVO3>ΔVO4, and the voltagevariations of the inner electrical potential difference Vseg1 are in adescending relationship of ΔVI1>ΔVI2>ΔVI3.

The reason of setting such a relationship as described above is asfollows.

The electrostatic attractive force F can be represented as“F=(½)ε(V/G)²S.” Here, ε denotes the dielectric constant, V denotes theapplied voltage, G denotes an inter-electrode gap, and S denotes theopposed electrode area. According to this formula, the electrostaticattractive force F is proportional to the square of the electricalpotential difference (the applied voltage V to the lower electrode 60 inthe present embodiment) between the lower and upper electrodes 60, 70.FIG. 10 is a graph (the chart showing F=V²) of the electrostaticattractive force F proportional to the square of the electricalpotential difference V. As shown in FIG. 10, when switching theelectrical potential difference V in the ascending direction to thefirst electrical potential difference, the second electrical potentialdifference, and then the third electrical potential difference, if theabsolute value ΔV1 of the difference between the first electricalpotential difference and the second electrical potential difference andthe absolute value ΔV2 of the difference between the second electricalpotential difference and the third electrical potential difference arethe same (ΔV1=ΔV2 in FIG. 10), it results that the increment ΔF of theelectrostatic attractive force rapidly increases from ΔF1 to ΔF2, whichcauses an overshoot.

Therefore, it is arranged that the absolute value ΔV2 of the differencebetween the second electrical potential difference and the thirdelectrical potential difference is smaller than the absolute value ΔV1of the difference between the first electrical potential difference andthe second electrical potential difference. Thus, it is possible tosuppress the rapid increase in the electrostatic attractive force whenthe gap is narrowed to thereby further suppress the overshoot, and thus,the prompter wavelength variation operation can be realized.

1.2.4. Voltage Application Period

The electrical potential difference control section 110 can set theperiod during which the electrical potential difference is set to thesecond electrical potential difference longer than the period duringwhich the electrical potential difference is set to the first electricalpotential difference, and the period during which the electricalpotential difference is set to the third electrical potential differencelonger than the period during which the electrical potential differenceis set to the second electrical potential difference with respect toeach of the inner electrical potential difference Vseg1 and the outerelectrical potential difference Vseg2. In the present embodiment, asshown in FIG. 8, regarding the outer electrical potential differenceVseg2, the period TO2 of the second electrical potential difference VO2is longer than the period TO1 of the first electrical potentialdifference VO1, the period TO3 of the third electrical potentialdifference VO3 is longer than the period TO2 of the second electricalpotential difference VO2, and the periods are in an ascendingrelationship of TO1<TO2<TO3<TO4<TO5. Similarly, as shown in FIG. 8,regarding the inner electrical potential difference Vseg1, the period112 of the second electrical potential difference VI2 is longer than theperiod TI1 of the first electrical potential difference VI1, the periodTI3 of the third electrical potential difference VI3 is longer than theperiod 112 of the second electrical potential difference VI2, and theperiods are in an ascending relationship of TI1<TI2<TI3<TI4.

When the second electrical potential difference larger than the firstelectrical potential difference is set, or the third electricalpotential difference larger than the second electrical potentialdifference is set, the restoring force of the second substrate 30 alsoincreases. Therefore, the time until the second substrate 30 stopsbecomes longer. In other words, the time until the first gap G1 betweenthe first and second reflecting films 40, 50 is established becomeslonger. In contrast, by setting the period set for the second electricalpotential difference longer than the period set for the first electricalpotential difference, and setting the period set for the thirdelectrical potential difference longer than the period set for thesecond electrical potential difference as in the present embodiment, itis possible to establish the first gap G1 at a predetermined value.

1.2.5. Electrical Potential Difference, Gap, and Variable Wavelength inthe Embodiment

FIG. 11 is a characteristics table showing data of the embodimentregarding the electrical potential difference, the gap, and the variablewavelength shown in FIG. 7. The data numbers 1 through 9 in FIG. 11correspond to the data numbers 1 through 9 in FIG. 7. FIG. 12 is a graphshowing a relationship between the applied voltage and the gap shown inFIG. 11. FIG. 13 is a graph showing a relationship between the appliedvoltage and the transmission peak wavelength shown in FIG. 11.

In FIG. 11, to make the transmission peak wavelength variable in 9levels from the maximum wavelength λ0 (=700 nm) to the minimumwavelength λ8 (=380 nm) of the transmission peak wavelength, the firstgap G1 between the first and second reflecting films 40, 50 is madevariable in 9 levels from the maximum gap g0 (=300 nm) to the minimumgap g8 (=140 nm) (see also FIG. 12). In accordance therewith, thetransmission peak wavelength is made variable in 9 levels from themaximum wavelength λ0 to the minimum wavelength λ8 (see also FIG. 13).Moreover, in FIG. 11, by setting the 9 levels of gaps g0 through g8 fromthe maximum gap g0 to the minimum gap g8 at regular intervals (=20 nm),the 9 levels of the wavelength λ0 through λ8 from the maximum wavelengthλ0 to the minimum wavelength λ8 are also set to have regular intervals(=40 nm). By varying the dimension of the first gap G1 between the firstand second reflecting films so as to sequentially decrease by a constantamount, the transmission peak wavelength is also shortened by a constantvalue.

The electrical potential difference control section 110 sets the outerelectrical potential difference Vseg2 sequentially to VO1 (=16.9V), VO2(=21.4V), VO3 (=25V), VO4 (=27.6V), and then VO5 (=29.8V), and then setsthe inner electrical potential difference Vseg1 sequentially to VI1(=16.4V), VI2 (=22.2V), VI3 (=26.3V), and then VI4 (=29.3V) whilekeeping the outer electrical potential difference Vseg2 at VO5 (=29.8V).

It should be noted that the dimension of the first gap G1 between thefirst and second reflecting films 40, 50 is more significantly affectedby the electrostatic attractive force F1 based on the inner electricalpotential difference Vseg1 than the electrostatic attractive force F2based on the outer electrical potential difference Vseg2. Therefore, ifthe inner electrical potential difference Vseg1 is firstly varied, andthen the outer electrical potential difference Vseg2 is varied whilekeeping the inner electrical potential difference Vseg1 at a constantvalue, since the electrostatic attractive force F1 by the innerelectrical potential difference Vseg1 is dominant, the gap between thefirst and second reflecting films 40, does not vary so largely as theouter electrical potential difference Vseg2 varies. Therefore, in thepresent embodiment, the outer electrical potential difference Vseg2 isvaried first, and then the inner electrical potential difference Vseg1is varied while keeping the outer electrical potential difference Vseg2at a constant value.

After the outer electrical potential difference Vseg2 reaches the outermaximum electrical potential difference VO5, the electrical potentialdifference control section 110 varies the inner electrical potentialdifference Vseg1 while keeping the outer electrical potential differenceVseg2 at the outer maximum electrical potential difference VO5.According to this process, a further gap variation corresponding to onestep from the first gap G1 set by the outer maximum electrical potentialdifference VO5 becomes possible due to the application of the innerelectrical potential difference Vseg1. Moreover, since the outer maximumelectrical potential difference VO5 has already been reached, it is notrequired to further vary the outer electrical potential difference Vseg2after the inner electrical potential difference Vseg1 is applied.Therefore, when varying the outer electrical potential difference Vseg2,no harmful influence is caused by the dominant electrostatic attractiveforce F1 based on the inner electrical potential difference Vseg1.

When the electrical potential difference control section 110 set theinner electrical potential difference Vseg1 to the inner maximumelectrical potential difference VI4, the first gap G1 between the firstand second reflecting films 40, 50 is set to the minimum distance g8.The outer maximum electrical potential difference VO5 and the innermaximum electrical potential difference VI4 can be set substantiallyequal to each other within a range not exceeding the maximum supplyvoltage V max to the electrical potential difference control section110. In the present embodiment the maximum supply voltage V max (=30V),for example, is supplied to the electrical potential difference controlsection 110 from the power supply 120 shown in FIG. 6. On this occasion,the outer maximum electrical potential difference VO5 is set to 29.8Vnot exceeding the maximum supply voltage V max (30V), and further theinner maximum electrical potential difference VI4 is also set to 29.3Vnot exceeding the maximum supply voltage V max (30V).

In FIG. 11, although there exists a minute difference of 0.5V betweenthe outer maximum electrical potential difference VO5 and the innermaximum electrical potential difference VI4, it can be said that theyare substantially the same. The minute difference occurs as a result ofthe design made under the intention that the transmission peakwavelength is obtained using the full scale (see FIGS. 12 and 13) of therange not exceeding the maximum supply voltage V max (30V) with respectto each of the inner electrical potential difference Vseg1 and the outerelectrical potential difference Vseg2. It is possible to strictlyconform the outer maximum electrical potential difference VO5 and theinner maximum electrical potential difference VI4 to each other byadjusting the area ratio between the first and second electrodes 62, 64and so on. However, there is little necessity for strictly conformingthem. It should be noted that according to the drive method of thepresent embodiment as explained with reference to FIG. 4A, by making theouter maximum electrical potential difference VO5 and the inner maximumelectrical potential difference VI4 substantially equal to each other,there is obtained an advantage that even electrostatic attractive forcecan be generated in almost entire circumference (including the opposedarea 74A1 to the first slit 64C) of the fourth electrode 74 locatedoutside.

In the present embodiment the electrical potential difference controlsection 110 sequentially applies the voltages to K (=2) electrodes,namely the first and second electrodes 62, 64 to thereby make the firstgap G1 between the first and second reflecting films 40, 50 variable intotally N (=9) levels. On this occasion, the minimum value of thevoltage variation between the applied voltages to be applied to the samesegment electrode 62 (or 64) out of the K (=2) electrodes, namely thefirst and second electrodes 62, 64 is defined as ΔVkmin. In the exampleshown in FIGS. 7 and 11, regarding the first electrode 62,ΔVkmin=ΔVI3=3.0V is obtained, and regarding the second electrode 64,ΔVkmin=ΔVO4=2.2V is obtained. Considering the fact that the power supplynoise is about 0.1V, it is obvious from the comparison with thecomparative example described below that the minimum voltage valueΔVkmin has low sensitivity to the noise.

1.2.6. Comparative Example

In the comparative example, as shown in FIGS. 14A and 14B, the lowerelectrode 61 shown in FIG. 14A is used instead of the lower electrode 60of the present embodiment, and the upper electrode 71 shown in FIG. 14Bis used instead of the upper electrode 70 of the present embodiment. Inother words, the lower and upper electrodes 61, 71 of the comparativeexample are not divided into segments.

FIG. 15 is a characteristics table showing the data of the electricalpotential difference between the lower and upper electrodes 61, 71 shownin FIGS. 14A and 14B, and the gap and the variable wavelength obtainedtherefrom. The data numbers 1 through 9 in FIG. 15 correspond to thedata numbers 1 through 9 in FIG. 11. FIG. 16 is a graph showing arelationship between the applied voltage and the gap shown in FIG. 15.FIG. 17 is a graph showing a relationship between the applied voltageand the transmission peak wavelength shown in FIG. 15.

Also in FIG. 15, in order for making the transmission peak wavelengthvariable in 9 levels from the maximum wavelength λ0 (=700 nm) to theminimum wavelength λ8 (=380 nm) of the transmission peak wavelength, thefirst gap G1 between the first and second reflecting films 40, 50 ismade variable in 9 levels from the maximum gap g0 (=300 nm) to theminimum gap g8 (=140 nm) (see also FIG. 15). In accordance therewith,the transmission peak wavelength is made variable in 9 levels from themaximum wavelength λ0 to the minimum wavelength λ8 (see also FIG. 16).

It should be noted that in the comparative example the 9 levels ofvoltage applied to the lower electrode 61 are set as a unique electrodewithin the full scale with the maximum supply voltage V max (30V).

The voltage minimum variation between the 9 levels of applied voltage inthe case of forming the lower electrode 61 of a unique electrode as inthe comparative example is defined as ΔV1 min. In the example shown inFIG. 15, ΔV1 min=0.9V is provided. Considering the fact that the powersupply noise is about 0.1V, the voltage minimum variation ΔV1 min of thecomparative example has high sensitivity to the noise.

In comparison between the voltage minimum variation ΔVkmin of thepresent embodiment and the voltage minimum variation ΔV1 min of thecomparative example, ΔV1 min<ΔVkmin becomes true, and therefore,according to the present embodiment, the sensitivity to the noise can bereduced.

2. Modified Example of Optical Filter

FIG. 18 shows an optical filter 11 that is different from the opticalfilter 10 shown in FIG. 1. A first substrate 21 shown in FIG. 18includes the second opposed surface 20A2 provided with the lowerelectrode 60 in FIG. 1, a first surface 20A21 in the periphery of thefirst opposed surface 20A1 provided with the first reflecting film 40 ina plan view, and a second surface 20A22 disposed in the periphery of thefirst surface 20A21 in the plan view and different in level from thefirst surface 20A21.

The first electrode 62 is disposed on the first surface 20A21, thesecond electrode 64 is disposed on the second surface 20A22, and aninitial value of a gap G22 between the second electrode 64 and the upperelectrode 70 and an initial value of a gap G21 between the firstelectrode 62 and the upper electrode 70 are different from each other.

The reason of setting such a relationship as described above is asfollows. Among the gaps G21, G22 in the initial state, the gap G22 inthe initial state, which is driven first, and corresponds to the secondelectrode 64, is reduced by the electrostatic attractive force actingbetween the second electrode 64 and the upper electrode 70. On thisoccasion, the gap G21 is also narrowed at the same time to be smallerthan the initial gap. Therefore, when starting to drive the firstelectrode 62, the gap G21 is smaller than the initial value.

Here, it is assumed that the first surface 20A21 and the second surface20A22 are coplanar with each other, and the initial values of the gapsG21, G22 are the same. In this case, the gap G22 in the case of firstdriving the second electrode 64, for example, is larger than the gap G21in the case of driving the first electrode 62 later. Therefore, itbecomes necessary to set the electrostatic attractive force in the caseof first driving the second electrode 64 to be excessively stronger thanthe electrostatic attractive force in the case in which the firstelectrode 64 is driven.

Therefore, in this case, it is preferable that to set the initial valueof the gap G22 to be smaller than the initial value of the gap G21 asshown in FIG. 18. It should be noted that when the first electrode 62 isdriven first, it is sufficient to set the initial value of the gap G21to be smaller than the initial value of the gap G22.

3. Analytical Instrument

FIG. 19 is a block diagram showing a schematic configuration of acolorimeter as an example of an analytical instrument according to anembodiment of the invention.

In FIG. 19, the colorimeter 200 is provided with a light source device202, a spectral measurement device 203, and a colorimetric controldevice 204. The colorimeter 200 emits, for example, a white light beamfrom the light source device 202 toward the test object A, and theninput the test target light beam, the light beam reflected by the testobject A, to the spectral measurement device 203. Subsequently, thecolorimeter 200 disperses the test target light beam with the spectralmeasurement device 203, and then spectral characteristics measurementfor measuring the intensity of each of the light beams with respectivewavelengths obtained by the dispersion is performed. In other words, thecolorimeter 200 makes the test target light beam as the light beamreflected by the test object A enter the optical filter (an etalon) 10,and then performs the spectral characteristics measurement for measuringthe intensity of the light beam transmitted through the etalon 10.Subsequently, the colorimetric control device 204 performs thecolorimetric process of the test object A, namely analyzes thewavelengths of the colored light beams included therein, and theproportions of the colored light beams, based on the spectralcharacteristics thus obtained.

The light source device 202 is provided with a light source 210 and aplurality of lenses 212 (one of the lenses is shown in FIG. 19), andemits a white light beam to the test object A. Further, the plurality oflenses 212 includes a collimator lens, and the light source device 202modifies the white light beam emitted from the light source 210 into aparallel light beam with the collimator lens, and emits it from theprojection lens not shown to the test object A.

As shown in FIG. 19, the spectral measurement device 203 is providedwith the etalon 10, a light receiving section 220 including lightreceiving elements, a drive circuit 230, and a control circuit section240. Further, the spectral measurement device 203 has an entranceoptical lens not shown disposed at a position opposed to the etalon 10,the entrance optical lens guiding the reflected light beam (the testtarget light beam) reflected by the test object A into the insidethereof.

The light receiving section 220 is composed of a plurality ofphotoelectric conversion elements (the light receiving elements), andgenerates an electric signal corresponding to the received lightintensity. Further, the light receiving section 220 is connected to thecontrol circuit section 240, and outputs the electric signal thusgenerated to the control circuit section 240 as a light receptionsignal. It should be noted that it is possible to constitute an opticalfilter module by integrating the etalon 10 and the light receivingsection (the light receiving elements) 220 as a unit.

The drive circuit 230 is connected to the lower electrode 60 and theupper electrode 70 of the etalon 10, and the control circuit section240. The drive circuit 230 applies the drive voltage between the lowerelectrode 60 and the upper electrode 70 based on the drive controlsignal input from the control circuit section 240 to thereby displacethe second substrate 30 to a predetermined displacement position. Thedrive voltage can be applied so that the desired electrical potentialdifference is caused between the lower electrode 60 and the upperelectrode 70, and for example, it is also possible to apply apredetermined voltage to the lower electrode 60 while setting the upperelectrode 70 to the ground potential. A direct-current voltage ispreferably used as the drive voltage.

The control circuit section 240 controls overall operations of thespectral measurement device 203. As shown in FIG. 19, the controlcircuit section 240 is mainly composed of, for example, a CPU 250 and astorage section 260. Further, the CPU 250 performs a spectralmeasurement process based on various programs and various data stored inthe storage section 260. The storage section 260 is configured includinga recording medium such as a memory or a hard disk drive, and stores thevarious programs and various data so as to be arbitrarily retrieved.

Here, the storage section 260 stores a voltage adjustment section 261, agap measurement section 262, a light intensity recognition section 263,and a measurement section 264 as a program. It should be noted that asdescribed above the gap measurement section 262 can be omitted.

Further, the storage section 260 stores voltage table data 265 shown inFIG. 7 containing voltage values to be applied to the electrostaticactuators 80, 90 for controlling the spacing of the first gap G1 and thetime periods, during which the respective voltage values are applied, inconjunction with each other.

The colorimetric control device 204 is connected to the spectralmeasurement device 203 and the light source device 202, and performs thecontrol of the light source device 202 and the colorimetric processbased on the spectral characteristics obtained by the spectralmeasurement device 203. As the colorimetric control device 204, ageneral-purpose personal computer, a handheld terminal, acolorimetric-dedicated computer, and so on can be used.

Further, as shown in FIG. 19, the colorimetric control device 204 isconfigured including a light source control section 272, a spectralcharacteristics obtaining section 270, a colorimetric processing section271, and so on.

The light source control section 272 is connected to the light sourcedevice 202. Further, the light source control section 272 outputs apredetermined control signal to the light source device 202 based on,for example, a setting input by the user to thereby make the lightsource device 202 emit a white light beam with a predeterminedbrightness.

The spectral characteristic obtaining section 270 is connected to thespectral measurement device 203, and obtains the spectralcharacteristics input from the spectral measurement device 203.

The colorimetric processing section 271 performs the colorimetricprocess for measuring the chromaticity of the test object A based on thespectral characteristics. For example, the colorimetric processingsection 271 performs a process of making a graph of the spectralcharacteristics obtained from the spectral measurement device 203, andthen outputting it to an output device such as a printer or a displaynot shown.

FIG. 20 is a flowchart showing the spectral measurement operation of thespectral measurement device 203. Firstly, the CPU 250 of the controlcircuit section 240 starts the voltage adjustment section 261, the lightintensity recognition section 263, and the measurement section 264.Further, the CPU 250 initializes a measurement count variable “n” (setn=0) as an initial state (step S1). It should be noted that themeasurement count variable n takes an integer value equal to or largerthan 0.

Subsequently, the measurement section 264 measures (step S2) theintensity of the light beam transmitted through the etalon 10 in theinitial state, namely the state in which no voltage is applied to theelectrostatic actuators 80, 90. It should be noted that it is alsopossible to previously measure the dimension of the first gap G1 in theinitial state, for example, at the time of manufacturing of the spectralmeasurement device and store it in the storage section 260. Then, themeasurement section 264 outputs the intensity of the transmitted lightbeam and the dimension of the first gap in the initial state obtainedhere to the colorimetric control device 204.

Subsequently, the voltage adjustment section 261 retrieves (step S3) thevoltage table data 265 stored in the storage section 260. Further, thevoltage adjustment section 261 adds (step S4) “1” to the measurementcount variable n.

Subsequently, the voltage adjustment section 261 obtains (step S5) thevoltage data of the first and second electrodes 62, 64 and the voltageapplication period data corresponding to the measurement count variablen from the voltage table data 265. Then, the voltage adjustment section261 outputs the drive control signal to the drive circuit 230 to therebyperform (step S6) the process of driving the electrostatic actuators 80,90 in accordance with the data of the voltage table data 265.

Further, the measurement section 264 performs (step S7) the spectralmeasurement process at the application time elapse timing. Specifically,the measurement section 264 makes the light intensity recognitionsection 263 measure the intensity of the transmitted light. Further, themeasurement section 264 performs the control of outputting the spectralmeasurement result, which includes the intensity of the transmittedlight beam thus measured and the wavelength of the transmitted lightbeam in conjunction with each other, to the colorimetric control device204. It should be noted that in the measurement of the light intensity,it is also possible to store the data of the light intensity of aplurality of times of measurement or all of the times of the measurementin the storage section 260, and then measure the light intensity of eachof the turns of the measurement in a lump after the data of the lightintensity of a plurality of times of measurement or all of the data ofthe light intensity has been obtained.

Subsequently, the CPU 250 determines (step S8) whether or not themeasurement count variable n reaches the maximum value N, and if itdetermines that the measurement count variable n is equal to N, itterminates the series of spectral measurement operation. In contrast, ifit is determined in the step S8 that the measurement count variable n issmaller than N, the CPU 250 returns to step S4 and performs the processof adding “1” to the measurement count variable n, and then repeats theprocess of the steps S5 through S8.

4. Optical Apparatus

FIG. 21 is a block diagram showing a schematic configuration of atransmitter of a wavelength division multiplexing communication systemas an example of an optical apparatus according to an embodiment of theinvention. In the wavelength division multiplexing (WDM) communication,using the property of the light that the signals with respectivewavelengths different from each other do not interfere each other, byusing a plurality of light signals with respective wavelengths differentfrom each other in a single optical fiber in a multiplexed manner, itbecomes possible to increase the data transmission quantity withoutexpanding the optical fiber lines.

In FIG. 21, a wavelength division multiplexing transmitter 300 has anoptical filter 10 to which a light beam from a light source 301 isinput, and a plurality of light beams with respective wavelengths λ0,λ1, λ2, . . . is transmitted through the optical filter 10. Transmissiondevices 311, 312, and 313 are provided corresponding to the respectivewavelengths. Optical pulse signals corresponding to a plurality ofchannels output from the transmission devices 311, 312, and 313 arecombined by a wavelength division multiplexing device 321 into onesignal, and then output to an optical fiber transmission channel 331.

The invention can also be applied to an optical code divisionmultiplexing (OCDM) transmitter in a similar manner. This is becausealthough in the OCDM the channels are discriminated by pattern matchingof encoded optical pulse signals, the optical pulses constituting theoptical pulse signals include light components with respectivewavelengths different from each other.

Although some embodiments are hereinabove explained, it should easily beunderstood by those skilled in the art that various modifications notsubstantially departing from the novel matters and the effects of theinvention are possible. Therefore, such modified examples should beincluded in the scope of the invention. For example, a term described atleast once with a different term having a broader sense or the samemeaning in the specification or the accompanying drawings can bereplaced with the different term in any part of the specification or theaccompanying drawings.

What is claimed is:
 1. An optical filter comprising: a first substrate;a second substrate that opposes to the first substrate; a firstreflector that is disposed between the first substrate and the secondsubstrate; a second reflector that is disposed between the firstreflector and the second substrate; a first electrode that is disposedbetween the first substrate and the second substrate; a second electrodethat is disposed between the first substrate and the second substrate,the first electrode being disposed between the first reflector and thesecond electrode; and a third electrode that is disposed between thefirst electrode and the second substrate, and that is disposed betweenthe second electrode and the second substrate, a first electricalpotential difference being applicable between the third electrode andthe first electrode, a second electrical potential difference beingapplicable between the third electrode and the second electrode, and thesecond electrical potential difference is independent from the firstelectrical potential difference.
 2. The optical filter according toclaim 1, the first electrode and the second electrode being disposed ona first face of the first substrate, the third electrode being disposedon a second face of the second substrate, the first face opposing to thesecond face.
 3. The optical filter according to claim 1, the secondsubstrate including a first portion and a second portion, the secondreflector overlapping to the first portion, the second portion beingdisposed at an outside of the first portion, the first portion beingthicker than the second portion.
 4. The optical filter according toclaim 1, the first electrode and the second electrode opposing to thethird electrode.
 5. The optical filter according to claim 1, the thirdelectrode including a fourth electrode and a fifth electrode, the fourthelectrode being electrically connected to the fifth electrode.
 6. Anoptical filter module comprising: the optical filter according to claim1; and a light receiving element that receives light from the opticalfilter.
 7. An analytical instrument comprising: the optical filtermodule according to claim 6; and a controller that controls the opticalfilter module.